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| JMnic Product Specification Silicon PNP Power Transistors 2SB868 DESCRIPTION With TO-220C package Complement to type 2SD960 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -4 -8 35 150 -50~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB868 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -50 |I A hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 260 fT Transition frequency IC=-0.5A ; VCE=-10V 30 MHz Switching times ton Turn-on time 0.15 |I s tstg Storage time IC=-1A ; IB1=-IB2=-0.1A 0.8 |I s tf Fall time 0.15 |I s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB868 Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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